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| hall ic series / hall ic(latch type ) bipolar detection hall ics bu52001gul, bu52011hfv, bu52021hfv, bu52015gul, bu52025g, bu52051nvx, bd7411g description the bipolar hall ics are magnetic switc hes that can operate both s-and n-pole , upo n which the output goes from hi to low. in addition to regular single-output hall ics, we offers a li ne up of dual-output units with a reverse output terminal (active high). features 1) bipolar detection 2) micropower operation (small current using in termittent operation method)(bd7411g is excluded.) 3) ultra-compact csp4 package (bu52001gul,bu52015gul) 4) ultra-small outline package hvsof5 (bu52011hfv,bu52021hfv) 5) ultra-small outline package sson004x1216 (bu52051nvxv) 6) small outline package (bu52025g,bd7411g 7) line up of supply voltage for 1.8v power supply voltage bu52011hfv,bu52015gul,bu52051nvx) for 3.0v power supply voltage (bu52001gul) for 3.3v power supply voltage (bu52021hfv,bu52025g) for 5.0v power supply voltage (bd7411g) 8) dual output type (bu52015gul) 9) high esd resistance 8kv(hbm) applications mobile phones, notebook computers, digital video camera, digital still camera, white goods etc. product lineup product name supply voltage (v) operate point (mt) hysteresis (mt) period (ms) supply current (avg) (a) output type package bu52001gul 2.40 3.30 +/-3.7 0.8 50 8.0 cmos vcsp50l1 bu52015gul 1.65 3.30 +/-3.0 0.9 50 5.0 cmos vcsp50l1 bu52051nvx 1.65 3.30 +/-3.0 0.9 50 5.0 cmos sson004x1216 bu52011hfv 1.65 3.30 +/-3.0 0.9 50 5.0 cmos hvsof5 bu52021hfv 2.40 3.60 +/-3.7 0.8 50 8.0 cmos hvsof5 bu52025g 2.40 3.60 +/-3.7 0.8 50 8.0 cmos ssop5 bd7411g 4.50 5.50 +/-3.4 0.4 - 2.0m cmos ssop5 plus is expressed on the s-pole; minus on the n-pole aug. 2008
2/20 absolute maxi mum ratings bu52001gul (ta=25 ) bu52015gul (ta=25 ) bu52051nvx (ta=25 ) bu52011hfv (ta=25 ) bu52021nvx (ta=25 ) bu52025g (ta=25 ) bd7411g (ta=25 ) parameters symbol limit unit parameters symbol limit unit power supply voltage v dd -0.1 +4.5 1 v power supply voltage v dd -0.1 +4.5 3 v output current i out 1 ma output current i out 0.5 ma power dissipation pd 420 2 mw power dissipation pd 420 4 mw operating temperature range t opr -40 +85 operating temperature range t opr -40 +85 storage temperature range t stg -40 +125 storage temperature range t stg -40 +125 parameters symbol limit unit parameters symbol limit unit power supply voltage v dd -0.1 +4.5 5 v power supply voltage v dd -0.1 +4.5 7 v output current i out 0.5 ma output current i out 0.5 ma power dissipation pd 2049 6 mw power dissipation pd 536 8 mw operating temperature range t opr -40 +85 operating temperature range t opr -40 +85 storage temperature range t stg -40 +125 storage temperature range t stg -40 +125 parameters symbol limit unit parameters symbol limit unit power supply voltage v dd -0.1 +4.5 9 v power supply voltage v dd -0.1 +4.5 11 v output current i out 1 ma output current i out 1 ma power dissipation pd 536 10 mw power dissipation pd 540 12 mw operating temperature range t opr -40 +85 operating temperature range t opr -40 +85 storage temperature range t stg -40 +125 storage temperature range t stg -40 +125 parameters symbol limit unit power supply voltage v dd -0.3 +7.0 13 v output current i out 1 ma power dissipation pd 540 14 mw operating temperature range t opr -40 +85 storage temperature range t stg -55 +150 1. not to exceed pd 2. reduced by 4.20mw for each increase in ta of 1 over 25 mounted on 50mm 58mm glass-epoxy pcb 3. not to exceed pd 4. reduced by 4.20mw for each increase in ta of 1 over 25 mounted on 50mm 58mm glass-epoxy pcb 5. not to exceed pd 6. reduced by 20.49mw for each increase in ta of 1 over 25 mounted on 70mm 70 mm 1.6mm glass-epoxy pcb 7. not to exceed pd 8. reduced by 5.36mw for each increase in ta of 1 over 25 mounted on 70mm 70 mm 1.6mm glass-epoxy pcb 9. not to exceed pd 10. reduced by5.36mw for each increase in ta of 1 over 25 mounted on 70mm 70 mm 1.6mm glass-epoxy pcb 11. not to exceed pd 12. reduced by 5.40mw for each increase in ta of 1 over 25 mounted on 70mm 70 mm 1.6mm glass-epoxy pcb 13. not to exceed pd 14. reduced by 5.40mw for each increase in ta of 1 over 25 mounted on 70mm 70 mm 1.6mm glass-epoxy pcb 3/20 magnetic, electrical characteristics bu52001gul (unless otherwise specified, v dd 3.0v, ta 25 ) parameters symbol limit unit conditions min typ max power supply voltage v dd 2.4 3.0 3.3 v operate point b ops - 3.7 5.5 mt b opn -5.5 -3.7 - release point b rps 0.8 2.9 - mt b rpn - -2.9 -0.8 hysteresis b hyss - 0.8 - mt b hysn - 0.8 - period t p - 50 100 ms output high vol age v oh v dd -0.4 - - v b rpn 8/20 technical (reference) data bu52001gul (v dd =2.4 3.3v type) bu52015gul, bu52051nvx, bu52011hfv (v dd =1.65 3.3v type) fig.6 bop,brp? ambient temperature fig.10 i dd ? ambient temperature fig.7 bop,brp? supply voltage fig.11 i dd ? supply voltage fig.8 t p ? ambient temperature fig.9 t p ? supply voltage fig.12 bop,brp? ambient temperature fig.15 t p ? supply voltage fig.14 t p ? ambient temperature fig.16 i dd ? ambient temperature fig.13 bop,brp? supply voltage fig.17 i dd ? supply voltage 0 10 20 30 40 50 60 70 80 90 100 - 60 -40 -20 0 20 40 60 80 100 ambient temperature [ ] period [ms] v dd =1.8v 0 10 20 30 40 50 60 70 80 90 100 2.0 2.4 2.8 3.2 3.6 supply voltage [v] period [ms] ta = 25c 0 10 20 30 40 50 60 70 80 90 100 1.4 1.8 2.2 2.6 3.0 3.4 3.8 supply voltage [v] period [ms] ta = 25c -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 - 60 - 40 - 20 0 20 40 60 80 100 ambient temperature [ ] magnetic flux density [mt] bop s brp s brp n bop n v dd =3.0v -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 2.02.4 2.83.23.6 supply voltage v magnetic flux density [mt] ta = 25c bop s brp s brp n bop n 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 -60 -40 -20 0 20 40 60 80 100 ambient temperature [ ] average supply current [a] v dd =3.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 2.0 2.4 2.8 3.2 3.6 supply voltage [v] average supply current [a] ta = 25c -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 - 60 - 40 -20 0 20 40 60 80 100 ambient temperature [ ] magnetic flux density [mt] bop s brp n bop n brp s v dd =1.8v -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 supply voltage v magnetic flux density [mt] ta = 25c bop s brp s brp n bop n 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 supply voltage [v] average supply current [a] ta = 25c 0 10 20 30 40 50 60 70 80 90 100 -60 - 40 - 20 0 20 40 60 80 100 ambient temperature [ ] period [ms] v dd =3.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 -60 -40 -20 0 20 40 60 80 100 ambient temperature [ ] average supply current [a] v dd =1.8v 9/20 bu52021hfv, bu52025g (v dd =2.4 3.6v type) bd7411g (v dd =4.5 5.5v type) fig.24 bop,brp? ambient temperature fig.25 bop,brp? supply voltage fig.26 i dd ? ambient temperature fig.27 i dd ? supply voltage fig.18 bop,brp? ambient temperature fig.19 bop,brp? supply voltage fig.22 i dd ? ambient temperature fig.23 i dd ? supply voltage fig.20 t p ? ambient temperature fig.21 t p ? supply voltage -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 - 60 - 40 -20 0 20 40 60 80 100 ambient temperature [ ] magnetic flux density [mt] bop s brp n bop n v dd =3.0v brp s 0 10 20 30 40 50 60 70 80 90 100 - 60 -40 - 20 0 20 40 60 80 100 ambient temperature [ ] average supply current [a] v dd =3.0v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 2.0 2.4 2.8 3.2 3.6 4.0 supply volatage [v] average supply current [a] ta = 25c -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 - 60 - 40 - 20 0 20 40 60 80 100 ambient temperature [ ] magnetic flux density [mt] bop s brp s brp n bop n v dd =5.0v -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 4.04.5 5.05.56.0 supply voltage v magnetic flux density [mt] bop s brp s brp n bop n ta = 25c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 ambient temperature [ ] average supply current [ma] v dd =5.0v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 4.0 4.5 5.0 5.5 6.0 supply voltage [v] average supply current [ma] ta = 25c -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 2.0 2.4 2.8 3.2 3.6 4.0 supply voltage v magnetic flux density [mt] bop s brp n bop n brp s ta = 25c 0 10 20 30 40 50 60 70 80 90 100 2.0 2.4 2.8 3.2 3.6 4.0 supply voltage [v] period [ms] ta = 25c 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 -60 -40 -20 0 20 40 60 80 100 ambient temperature [ ] average supply current [a] v dd =3.0v 10/20 block diagram bu52001gul bu52015gul fig.29 pin no. pin name function comment a1 vdd power supply a2 gnd ground b1 out output b2 n.c. open or short to gnd. pin no. pin name function comment a1 out1 output pin (active low) a2 out2 output pin (active high) b1 gnd ground b2 vdd power supply voltage out gnd dd latch timing logic dynamic offset cancellation sample & hold hall element a2 b1 a1 fig.28 0.1 f the cmos output terminals enable direct connection to the pc, with no external pull-up resistor required. adjust the bypass capacitor value as necessary, according to voltage noise conditions, etc. a1 b2 b1 a2 reverse a2 b2 b1 a1 surface gnd out1 out2 latch vdd gnd vdd timing logic sample & hold hall element dynamic offset cancellation a1 a2 b1 b2 0.1 f the cmos output terminals enable direct connection to the pc, with no external pull-up resistor required. adjust the bypass capacitor value as necessary, according to voltage noise conditions, etc. a1 b2 b1 a2 reverse a2 b2 b1 a1 surface 11/20 bu52051nvx bu52011hfv,bu52021hfv pin no. pin name function comment 1 out output 2 gnd ground 3 n.c. open or short to gnd. 4 vdd power supply pin no. pin name function comment 1 n.c. open or short to gnd. 2 gnd ground 3 n.c. open or short to gnd. 4 vdd power supply 5 out output out gnd dd latch timing logic dynamic offset cancellation sample & hold hall element 2 1 4 fig.30 0.1 f the cmos output terminals enable direct connection to the pc, with no external pull-up resistor required. adjust the bypass capacitor value as necessary, according to voltage noise conditions, etc. 1 2 4 3 3 4 2 1 reverse surface the cmos output terminals enable direct connection to the pc, with no external pull-up resistor required. adjust the bypass capacitor value as necessary, according to voltage noise conditions, etc. out gnd dd latch timing logic dynamic offset cancellation sample & hold hall element 2 5 4 fig.31 0.1 f reverse 1 2 5 3 3 surface 1 4 5 2 4 12/20 bu52025g bd7411g fig.33 pin no. pin name function comment 1 n.c. open or short to gnd. 2 gnd ground 3 n.c. open or short to gnd. 4 vdd power supply 5 out output pin no. pin name function comment 1 n.c. open or short to gnd. 2 gnd ground 3 n.c. open or short to gnd. 4 out output 5 vdd power supply the cmos output terminals enable direct connection to the pc, with no external pull-up resistor required. adjust the bypass capacitor value as necessary, according to voltage noise conditions, etc. out gnd dd latch timing logic dynamic offset cancellation sample & hold hall element 2 5 4 fig.32 0.1 f reverse surface 1 2 5 3 3 1 4 5 2 4 reverse surface 1 2 5 3 3 1 4 5 2 4 the cmos output terminals enable direct connection to the pc, with no external pull-up resistor required. adjust the bypass capacitor value as necessary, according to voltage noise conditions, etc. 0.1 f out gnd dd latch timing logic dynamic offset cancellation hall element 2 4 5 sample & hold reg 13/20 description of operations (micropower operation) (offset cancelation) the bipolar detection hall ic adopts an intermittent operation method to save energy . at startup, the hall elements, amp, comparator and other detection circuits power on and magnetic detection begins. during standby, the detection circuits power off, thereby reducing current consumption. the detection results are held while standby is active, and then output. reference period: 50ms (max100ms) reference startup time: 48 s bd7411g don?t adopts an intermittent operation method. i dd standby startup time period t fig.34 the hall elements form an equivalent wheatstone (resistor) bridge circuit. offset voltage may be generated by a differential in this bridge resistance, or can arise from changes in resistance due to package or bonding stress. a dynamic offset cancellation circuit is employed to cancel this offset voltage. when hall elements are connected as shown in fig. 35 and a magnetic field is applied perpend icular to the hall elements, voltage is generated at the mid- point terminal of the bridge. this is known as hall voltage. dynamic cancellation switches the wiring (shown in the figure) to redirect the current flow to a 90 ? angle from its original path, and thereby cancels the hall voltage. the magnetic signal (only) is maintained in the sample/hold circuit during the offset cancellation process and then released. gnd v dd i b hall voltage fig.35 14/20 (magnetic field detection mechanism) the bipolar detection hall ic detects magnetic fields running perpendicular to the top surface of the pack age. there is an inverse relationship between magnetic flux density and the distance sepa rating the magnet and the hall ic: when distance increases magnetic density falls. when it drops below the operate point (bop), output goes high. when the magnet gets closer to the ic and magnetic density rises, to the operate poi nt, the output switches low. in low output mode, the dist ance from the magnet to the ic increases again until the magnetic density falls to a point just below bop, and output returns high. (this point, where magnetic flux density restores high output, is known as the re lease point, brp.) this detection and adjustment mechanism is designed to prevent noise, oscillation and other erratic system operation. flux b low bop n brp n brp s bop s 0 high n-pole magnetic flux density [mt] s-pole fig.37 flux high high low out [v] n n s s s n the hall ic cannot detect magnetic fields that run horizontal to the package top layer. be certain to configure the hall ic so that t he magnetic field is perpendicular to the top layer. fig.36 s s n s n s n flux flux 15/20 intermittent operation at power on the bipolar detection hall ic adopts an intermittent operation method in detecting the magnetic field during startup, as shown in fig. 38. it outputs to the appr opriate terminal based on the detection re sult and maintains the output condition during the standby period. the time from power on until the en d of the initial startup period is an indefinite interval, but it cannot exceed the maximum period, 1 00ms. to accommodate the system desig n, the hall ic output read should be programmed within 100ms of power on, but after the time allo wed for the period ambient temperature and supply voltage. bd7411g don?t adopts an intermittent operation method. magnet selection of the two representative varieties of permanent magnet, neodym ium generally offers greater magnetic power per volume than ferrite, thereby enabling the highest degree of miniat urization, thus, neodymium is best suited for small equipment applications. fig. 39 shows the relation between the size (volum e) of a neodymium magnet and magnetic flux density. the graph plots the correlation between the distance (l) from thr ee versions of a 4mm x 4mm cross-section neodymium magnet (1mm, 2mm, and 3mm thick) and magnetic flux density. fig. 40 shows hall ic detection distance ? a good guide for determining the proper size and detection distance of t he magnet. based on the bu52011hfv, bu52015gul operating point max 5.0 mt, the minimum detection distance for the 1mm, 2mm and 3mm magnets would be 7.6mm, 9.22mm, and 10.4mm, respectively. to increase the magnet?s detection distance, either increase its thickness or sectional area. magnet material: neomax-44h (material) maker: neomax co.,ltd. 0 1 2 3 4 5 6 7 8 9 10 02468101214161820 distance between magnet and hall ic [mm] magnetic flux density[mt] fig.39 7.6mm t=3mm t=1mm t=2mm 9.2mm 10.4mm x=y=4mm t=1mm,2mm,3mm x t y flux density measuring point l: variable t fig.40 magnet dimensions and flux density measuring point magnet size magnet vdd startup time standby time standby time startup time (intermittent action) indefinite out (no magnetic field present) indefinite out (magnetic field present) low high supply current fig.38 power on 16/20 position of the hall effect ic(reference) footprint dimensions (optimize f ootprint dimensions to the board design and soldering condition) ( unit mm ) sson004x1216 vcsp50l1 hvsof5 ssop5 0.8 0.6 1.45 0.6 4 0.8 0.2 0.55 0.55 0.35 0.6 0.8 0.2 ( unit mm ) please be cautious to potential stress from pcb material, strength, mounting positions. if you had any further questions or concerns, please contact your rohm sales and affiliate. vcsp50l1 sson004x1216 hvsof5 ssop5 17/20 terminal equivalent circuit diagram out , out1, out2 operation notes 1 absolute maximum ratings exceeding the absolute maximum ratings for supply voltage, operating conditions, etc. may result in damage to or destruction of the ic. because the source (short mode or open mode) cannot be identi fied if the device is damaged in this way, it is important to take physical safety measures such as fusing when implementing any special mode that operates in excess of absolute rating limits. 2) gnd voltage make sure that the gnd terminal potential is maintained at the minimum in any oper ating state, and is always kept lower than the potential of all other pins. 3) thermal design use a thermal design that allows for sufficient margin in light of the power dissipation (pd) in actual operating conditions. 4) pin shorts and mounting errors use caution when positioning the ic for m ounting on printed circuit boards. mounting e rrors, such as improper positioning or orientation, may damage or destroy the device. the ic may also be damaged or destroyed if output pins are shorted together, or if shorts occur between t he output pin and supply pin or gnd. 5) positioning components in proximity to the hall ic and magnet positioning magnetic components in close proximity to the hall ic or magnet may alter the magn etic field, and therefore the magnetic detection operation. thus, plac ing magnetic components near the hall ic and magnet should be avoided in the design if possible. however, where there is no alternative to employing such a design, be sure to thoroughly test and evaluate performance with the magnetic co mponent(s) in place to verify normal op eration before implem enting the design. 6) slide-by position sensing fig.42 depicts the slide-by configuration employed for positio n sensing. note that when t he gap (d) between the magnet and the hall ic is narrowed, the reverse magnetic field generated by the magnet can cause the ic to malfunction. as seen in fig.43, the magnetic field runs in opposite directions at point a and point b. since the bipolar detection hall ic can detect the s-pole at point a and the n-pole at point b, it can wind up switching output on as the magnet slides by in the process of position detection. fig. 44 pl ots magnetic flux density during the magnet sli de-by. although a reverse magnetic field was generated in the process, the magnetic flux density decreased compared with the center of the m agnet. this demonstrates that slightly widening the gap (d) betwe en the magnet and hall ic reduces the reverse magnetic field and prevents malfunctions. gnd vdd fig.41 because they are configured for cmos (inverter) output, the output pins require no external resistance and allow direct connection to the pc. this, in turn, enables reduction of the current that would otherwise flow to the external resistor during magnetic field detection, and supports overall low current (micropower) operation. l d magnet hall ic slide fig.42 -10 -8 -6 -4 -2 0 2 4 6 8 10 012345678910 horizontal distance from the magnet [mm] magnetic fux density[mt] reverse fig.44 fig.43 b s a n flux flux 18/20 7) operation in strong electromagnetic fields exercise extreme caution about using the device in the presence of a strong electr omagnetic field, as such use may cause the ic to malfunction. 8) common impedance make sure that the power supply and gnd wiring limits common impedance to the extent possible by, for example, employing short, thick supply and ground lines. also, take measures to minimize ripple such as using an inductor or capacitor. 9) gnd wiring pattern when both a small-signal gnd and high-current gnd are provided, single- point grounding at the re ference point of the set pcb is recommended, in order to separate the small-signal and high-current patterns, and to ensure that voltage changes due to the wiring resistance and high current do not cause any volt age fluctuation in the small-si gnal gnd. in the same way, care must also be taken to avoid wiring pattern fluctuat ions in the gnd wiring pattern of external components. 10) exposure to strong light exposure to halogen lamps, uv and other st rong light sources may cause the ic to malf unction. if the ic is subject to such exposure, provide a shield or take other measures to protect it from the ligh t. in testing, exposure to white led and fluorescent light sources was shown to have no significant effect on the ic. 11) power source design since the ic performs intermittent operati on, it has peak current when it?s on. please taking that into account and under examine adequate evaluations when designing the power source. product designations (selecting a model name when ordering) b u rohm model 5 0 2 0 1 package type g u l e2 = reel-wound embossed taping e2 part number orders are available in complete units only. < tape/reel info > tape quantity direction of feed embossed carrier tape 3000pcs e2 (correct direction: with reel in the left hand, the 1pin of the product should be at the upper left. pull tape out with the right hand) reel direction of feed 1pin 1234 1234 1234 1234 1234 1.10 ? 0.1 0.10 ? 0.05 0.55max s s 0.08 0.30 ? 0.1 0.50 4- 0.25 ? 0.05 a 0.05 b a 1.10 ? 0.1 0.30 ? 0.1 0.50 b 1pin mark 12 a b vcsp50l1 19/20 (unit:mm) ssop5 0.2min +0.05 0.13 -0.03 -4 +6 4 2.8 0.2 1.6 +0.2 -0.1 1.1 0.05 4 2.9 0.2 0.05 0.05 1.25max 0.95 0.42 -0.04 +0.05 5 1 2 3 orders are available in complete units only. embossed carrier tape tr (correct direction: with reel in the left hand, the 1pin of the product should be at the upper left. pull tape out with the right hand) tape quantity direction of feed 3000 p cs reel feed direction 1pin xx x x x x xx x x x x xx x x x x xx x x x x x x x x x x < tape/reel info > catalog no.08t155b '08.8 rohm ? notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix |
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